CSD25485F5
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、42mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
物料参数
| VDS (V): | -20 |
| VGS (V): | -12 |
| Type: | P-channel |
| Configuration: | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ): | 42 |
| Rds(on) at VGS=2.5 V (max) (mΩ): | 70 |
| VGSTH typ (typ) (V): | -0.95 |
| QG (typ) (nC): | 2.7 |
| QGD (typ) (nC): | 0.56 |
| QGS (typ) (nC): | 0.67 |
| ID - silicon limited at TC=25°C (A): | 3.2 |
| Logic level: | Yes |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
| VDS (V): | -20 |
| VGS (V): | -12 |
| Type: | P-channel |
| Configuration: | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ): | 42 |
| Rds(on) at VGS=2.5 V (max) (mΩ): | 70 |
| VGSTH typ (typ) (V): | -0.95 |
| QG (typ) (nC): | 2.7 |
| QGD (typ) (nC): | 0.56 |
| QGS (typ) (nC): | 0.67 |
| ID - silicon limited at TC=25°C (A): | 3.2 |
| Logic level: | Yes |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
无库存
